CN-IGBTM-1200-02

CN-IGBTM-1200-02

Package
DIP-IPM
Status
Active
Compliance
RoHS, REACH, AEC-Q101
Download datasheet

Product Technology Overview

IGBT Module in the Power Semiconductor Devices family. High Voltage and High Current Power Control Devices. Including MOSFETs, IGBTs, power diodes, and power modules featuring low power loss, high-speed switching capability, and optimized thermal performance. ChipNobo documents technology, parameters, and application fit before commercial steps.

Key Features

  • Package options for design fit DIP-IPM package with series coverage for layout flexibility.
  • Verified electrical window Vce(sat) 2.0 V
  • Application-ready compliance RoHS / REACH and category-relevant qualification where applicable.
  • Lifecycle status: Active Status visible up front so OEM teams can plan continuity.

Technical Parameters

Product Family CN-IGBTM
Category IGBT Module
Package DIP-IPM
Tier Entry
Voltage Rating 1200 Vces
Current Rating 15 A
Power Rating 60 W
Operating Temperature -40°C ~ +85°C
Core Spec Vce(sat) 2.0 V
Compliance RoHS, REACH, AEC-Q101
Lifecycle Active

Typical Applications

  • Motor drives & inverters
  • EV / energy conversion
  • Industrial power stages

Explore application industries →

Product Selection

Compare series options in this category, then refine with the family parametric filter.

Parametric filter for Power Semiconductor Devices →